首页> 外文会议>Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International >NOR virtual ground (NVG)-a new scaling concept for very highdensity flash EEPROM and its implementation in a 0.5 um process
【24h】

NOR virtual ground (NVG)-a new scaling concept for very highdensity flash EEPROM and its implementation in a 0.5 um process

机译:NOR虚拟地面(NVG)-一种适用于极高空间的全新缩放概念密度闪存EEPROM及其在0.5 um工艺中的实现

获取原文

摘要

A new NOR virtual ground flash cell array concept is introduced. A2.4 um2 cell size based on a 0.5 um process is realized,which is a 35% cell size reduction compared with the conventional NORcell
机译:介绍了一种新的NOR虚拟地面闪存单元阵列概念。一种 实现了基于0.5 um工艺的2.4 um 2 像元大小, 与传统的NOR相比,单元尺寸减少了35% 细胞

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号