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Wide bandwidth 10.6 µm (Hg,Cd)Te photodiodes for infrared heterodyne applications

机译:宽带宽10.6 µm(Hg,Cd)Te光电二极管,用于红外外差应用

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This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10-20watts/Hz, ever measured for 10.6 µm n+-n--p+(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n-layer of approximately 4.0 × 1014to 1.0 × 1015cm-3.
机译:本文报告了最低的噪声等效功率(NEP),约为6.2×10 -20 watts / Hz,曾测量过10.6 µm n + -n -<通过黑体外差辐射技术(1-3)确定,在1750 MHz的频率和77 K下的/ sup> -p + (Hg,Cd)Te光电二极管。 NEP的该值对应于30%的有效外差量子效率。这些器件是通过平面工艺技术制造的,电容-电压测量结果表明,这些结是突变的,在n -层中的施主浓度约为4.0×10 14 到1.0×10 15 cm -3

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