A new test bench to measure dynamic output I/V characteristics of FETs

摘要

In this paper a new test bench for the measurement of FETs dynamic output I/V characteristics is presented. The characterization is carried out generating asymmetrical voltage signals at the gate of the device while the load at the drain terminal is varied. The experimental results obtained performing on-wafer measurements of a 1 mm GaAs PHEMT using the proposed test bench, successfully compare with those carried out utilizing a conventional pulsed system.