Integrated 32 ?? 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented PZT thin films on epitaxial ??-Al2O3/Si substrates

摘要

Integrated 32 ?? 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented Pb(Zr0.4, Ti0.6)O3 (PZT) thin films on epitaxial ??-Al2O3/Si substrates has been fabricated on the one chip. The sensor array utilizes a sol-gel deposited PZT(001) thin film as a pyroelectric material, an n-JFET as a low noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure on epitaxial Pt(001)/??-Al2O3(001)/Si(001) substrates.