Monolithic integration of both GaInAs photodiodes and GaInAsPlasers with impedance matching circuits for 6 GHz transmissions

摘要

The authors report the realization of monolithic impedance-matchedlasers and photodiodes on InP substrates. The objective was todemonstrate the advantage of such an approach by using a transmissionlink operating at 6 GHz and 1.3 μm. Starting from the analysis andmodeling of discrete lasers and photodiodes fabricated inThomson-CSF/LCR, the equivalent circuits of each device have beendetermined to design the associated impedance-matching cells