Embedded STT-MRAM in 28-nm FDSOI Logic Process for Industrial MCU/IoT Application

摘要

We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (-40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260°C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.