First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

摘要

We are demonstrating for the first time epi-based monocrystalline silicon macaroni channel 3-D NAND devices. The highly controllable channel replacement process sequence leads to > 95% yield, with excellent uniformity and reproducibility, proving its potential for manufacturability. The electron mobility of the channel is improved by a factor 30 compared to the polycrystalline macaroni Si channel, together with a reduction of the off state leakage. Furthermore, this channel replacement fabrication process does not affect memory performance and reliability. The performance benefits of this channel replacement technique make it a potential candidate for fabricating future 3-D NAND devices.