On the ESD Reliability Issues in Carbon Electronics: Graphene and Carbon Nano Tubes

摘要

In this work, we present experimental investigations and new physical insights into the ESD behavior and failure of large area CVD graphene RF transistors and Multiwall carbon nanotubes. Unique two stage defect induced failure in graphene transistors is reported for the first time. Detailed study on the self-heating and its implication on the failure current and carrier transport in graphene FETs is addressed with the transient analysis in ESD time scales. A unique power law like behavior is also reported in Multi wall CNT's.