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Computing Fréchet Distance Metric Based L-Shape Tile Decomposition for E-Beam Lithography

机译:基于电子距离光刻的基于弗里谢距离度量的L形瓦片分解

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A Basic step in mask data preparation is layout decomposition. This is also a fundamental step in e-beam lithography (EBL) writing. To achieve better throughput in EBL - shape writing technique has been adopted. It is termed as L-shape fracturing by keeping similarity with rectangular fracturing. While implementing this new technique, a very thinarrow feature is being generated termed as sliver. To achieve better manufacturability, proper methodology needs to be developed for minimization of sliver. This paper proposes a framework for L-shape fracturing with map matching with respect to Fréchet distance metrics. The framework starts with finding out concave vertices for a given layout as input. It then proceeds to next level by computing most densely populated concave points with a goal to form balanced partition of concave points of the given layout. In the subsequent steps, Fréchet distance based layout fracturing is finally accomplished. In this paper a heuristic function is proposed for sliver minimization as well as generation of L-shape features.
机译:掩膜数据准备的基本步骤是布局分解。这也是电子束光刻(EBL)写作的基本步骤。为了在EBL中实现更好的吞吐量-已采用形状写入技术。通过保持与矩形压裂的相似性将其称为L形压裂。在实施这项新技术时,会生成一个非常细/窄的特征,称为条子。为了获得更好的可制造性,需要开发适当的方法以最小化条子。本文提出了一种针对弗雷谢特距离度量进行地图匹配的L形压裂框架。该框架首先找出给定布局的凹形顶点作为输入。然后,通过计算人口最稠密的凹点进行下一阶段,以形成给定布局的凹点的平衡分区。在随后的步骤中,最终完成了基于Fréchet距离的布局断裂。在本文中,提出了一种启发式函数,用于最小化条子以及生成L形特征。

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