First demonstration of ∼3500 cm/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

摘要

In this paper, we demonstrate for the first time an implant free InGaAs n-MOSFET that meets the reliability target for advanced technology nodes with a max operating V of 0.6 V. In addition, an excellent electron mobility (μ=3531 cm2/V-s), low SS=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1nm EOT without loss of performance, reliability and further reduction of the sub-threshold swing (SS=68mV/dec). On top of the novel IL we presented last year, in this paper we insert a LaSiO layer between the IL and HfO offering an increased chemical stability of the gate stack. This combination is key and offers both an improved interface quality as well as a reduction of the oxide trap density.