CMOS analogue integrated circuits; differential amplifiers; feedback amplifiers; operational amplifiers; asymmetric transformer peaking technique; bandwidth 50 GHz; bandwidth extension; bit rate 50 Gbit/s; capacitance 50 fF; differential signaling; differential transimpedance amplifier; modified regulated-cascode input stage; photodiode capacitance; power 49.2 mW; shunt-feedback common-source amplifier; size 65 nm; standard CMOS process; transimpedance gain; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Current measurement; Optical receivers; Semiconductor device measurement; Sensitivity; CMOS; TIA; regulated-cascode; transformer;
机译:基于0.18μmCMOS技术的差分减阻放大器设计
机译:采用0.35μmSiGe BICMOS技术的宽带差分互阻放大器,用于10 Gbit / s光纤前端
机译:用于光学互连的多芯片氧化物技术中的1 Gb / s 80dBΩ全差分CMOS跨阻放大器
机译:65nm CMOS技术中的50 GB / S差分跨阻抗放大器
机译:采用0.18微米CMOS技术的跨阻放大器设计。
机译:180Vpp集成线性放大器用于高压CMOS SOI技术中的超声成像应用
机译:0.35 µm CMOS技术中的跨阻放大器的研究