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Resonant power supply noise reduction using on-die decoupling capacitors embedded in organic interposer

机译:使用嵌入在有机中介层中的片上去耦电容器来降低谐振电源噪声

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This paper demonstrates an on-die STO thin film decoupling capacitor used for resonant power supply noise reduction. The on-die STO capacitor consists of STO whose dielectric constant is about 20 and is sandwitched by Cu films in an organic interposer on which we can also draw connection wires by Cu deposition. The capacitor was attached directly on our test chip using ball banding technique through PADs connection. Our experimental results using a real silicon chip shows that our on-die STO capacitor achieved significant resonant supply noise reduction. This result also shows that we can reduce the power supply noise without chip area penalty, and also it enables us to modify the noise characteristics even after the chip fabrication process.
机译:本文演示了一种用于降低谐振电源噪声的片上STO薄膜去耦电容器。片上STO电容器由STO组成,该STO的介电常数约为20,并在有机中介层中被Cu膜吸引,在该中介层上,我们还可以通过Cu沉积绘制连接线。电容器通过PAD连接使用球带技术直接连接到我们的测试芯片上。我们使用真实硅芯片的实验结果表明,我们的片上STO电容器可显着降低谐振电源噪声。该结果还表明,我们可以在不降低芯片面积的情况下降低电源噪声,并且即使在芯片制造过程之后,也可以使我们修改噪声特性。

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