A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application

摘要

This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and 450 MHz, respectively. Total bandwidth of 750 MHz which covers the IM3 bandwidth of LTE-A signal is achieved. Drain efficiency at 6 dB back off exceeds 43% over 100 MHz bandwidths at both bands. The fabricated dual-band DPA is 135 x 65 mm2.