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High-Index Immersion Lithography: Preventing Lens Photocontamination and Identifying Optical Behavior of LuAG

机译:高指数浸没式光刻技术:防止镜头光污染和识别LuAG的光学行为

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A potential extension of water-based 193-nm immersion lithography involves transition to a higher refractive index organic immersion fluid coupled with a higher index last lens element. While considerable progress has been made in improving the photo-durability of the immersion fluid itself, photo-induced contamination of the last lens element caused by laser exposure in the presence of such organic fluids remains a major concern. In this work, we study remediation strategies for such contamination, which would be compatible with conventional lithographic production environments. In general, surface photocontamination layers were found to be highly graphitic in nature, where the first monolayer is strongly bound to the substrate. We have attempted to develop a surface passivation treatment for altering the monolayer chemistry and preventing large-scale contamination, but found such treatments to be unstable under laser irradiation. On the other hand, using hydrogen peroxide as a in-situ cleaning solution has been shown to be extremely effective. We also present first laser-based durability results of LuAG, which is a leading candidate material for high index last element to be used with high index fluids.
机译:水基193 nm浸没式光刻技术的潜在扩展涉及过渡到更高折射率的有机浸没液和更高折射率的最后透镜元件。尽管在改善浸没液本身的光耐久性方面已经取得了相当大的进步,但是在存在这种有机液的情况下,由激光曝光引起的最后一个透镜元件的光致污染仍然是一个主要问题。在这项工作中,我们研究了这种污染的补救策略,该策略将与传统的光刻生产环境兼容。通常,发现表面光污染层本质上是高度石墨化的,其中第一单层牢固地结合到基底上。我们已经尝试开发一种表面钝化处理以改变单层化学性质并防止大规模污染,但是发现这种处理在激光照射下不稳定。另一方面,已经证明使用过氧化氢作为原位清洁溶液是非常有效的。我们还介绍了LuAG的首次基于激光的耐久性结果,LuAG是用于高折射率流体的高折射率最后元件的领先候选材料。

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