This paper analyzes the thermal design of an RF High Power amplifier. The device, with a maximum dimension of only .4 mm, has a high power density, dissipating up to 4 W. There is concern about the impacts of device proximity on thermal performance due to desired packaging density. The devices are numerically modeled and the effects of device proximity, heat spreader dimensions, material conductivity, and die bond layer thickness and substrate thickness on device operating temperature are quantified.
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