Large spin signals of local 3-terminal spin valve effect in n-Si/MgO/Co_2Fe_(0.4)Mn_(0.6)Si lateral structured devices at low temperature

摘要

Spin transports between two ferromagnetic (FM)electrodes on a semiconductor (SC) channel have beendemonstrated by many groups using non-local Hanleand spin-valve measurements. However, the obtainedmagnetoresistance ratio was considerably smallbecause spin polarizations of the FM materials aresmall. For the enhancement of spin signals, Co-basedHeusler alloys are promising materials as the FMelectrode because of their high spin polarizations.In a previous work, we successfully fabricated B2ordered Co_2Fe_(0.4)Mn_(0.6)Si (CFMS) films with highsaturation magnetization on Si(100) substrates. Inthis work, we investigated post annealing temperaturedependence of the local 3-terminal spin valve signalsthrough the n-type Si channel using CFMS electrode.