Resistive thin-film coatings as an alternative to classical slow wave structures in millimeter-wave vacuum electron devices

摘要

We consider the results of modern scientific literature review on the experience and possibilities of using resistive thinfilmlayers in vacuum electron devices (resistive wall amplifier). Such thin-film layers can be used as analogue ofconventional slow wave structures in vacuum microwave amplifiers. The disadvantages of conventional slow wavestructures in millimeter and submillimeter wavelength ranges are discussed. The main advantages and features ofresistive thin-film layers, which could be serve as slow wave structures in amplifying devices of vacuum microwaveelectronics of millimeter and submillimeter wavelength range, are revealed. The proposed review covers the period from1953, when the idea of a resistive wall amplifier was first introduced, to 2018. It was shown that the majority of literatureconsist only theoretical results, only a few papers consider the experimental results. Also it is noted that the focus ofmodern study shifts to the using of metamaterials as a resistive thin-film layer, very promising theoretical results andsome cold measurements were obtained only in the GHz region.