Formation of transparent SiO_2 thin film at room temperature with 172nm Xe_2~ centre dot excimer lamp irradiation

摘要

High-speed growth of a transparent SiO_2 film performed at room temperature. In this method, the film can be fabricated by a signle gas fill without changing material gases. A silcion substrate was placed in a reaction chamber, which was filled with NF_3 and O_2 gases. The gases were exosed to the Xe_2 ~ centre dot excimer lamplight, and SiF_4 which reacted with NO_2 in gas ambient and was oxidized to form SiO_2. The molecular layer was produced per reaction, and by voluntarily repeated reaction, the transparent SiO_2 thin film was grown. By annealing the formed SiO_2 film increased, the higher the annealing temperature became, the more the refractive index increased. And then, I was found that the refractive index depend on the amount of F atoms, an impure ingredient, inside the formed SiO_2 thin film.