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Preparation and characterization of ZrO₂/Si structure

机译：ZrO _{2 / Si结构的制备与表征}

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In this paper, we have prepared ZrO₂ and lanthanideoxide thin films by PLD (Pulsed Laser Deposition) method andcharacterized these electrical properties by using C-V and J-Vcharacteristics and these interfacial properties by using PRspectroscopy

机译：在本文中，我们制备了ZrO _{2 和镧系元素
通过PLD（脉冲激光沉积）方法氧化物薄膜和
通过使用C-V和J-V来表征这些电气性质
使用PR的特征和这些界面性质
光谱学}

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《Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on 》||p.170-173|共4页
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Sohgawa M.; Kitai S.; Kanda H.; Kanashima T.; Fujimoto A.; Okuyama M.;
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4. Preparation and characterization of ZrO/sub 2//Si structure [C] . Sohgawa, M., Kitai, Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on . 2001

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Preparation and characterization of ZrO2/Si structure

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Preparation and characterization of ZrO₂/Si structure