Effect of Ga and P dopants on the thermoelectric properties ofn-type SiGe

摘要

The purpose of this study was to hot-press improved n-typeSi₈₀Ge₂₀/GaP samples directly (without any heattreatment) and to confirm that a Ga/P ratio less than one increases thesolubility of P and, hence, improves the power factor and Z.One of the three sample (Ga/P=0.43) had an improvement in Z ofabout 20% between 400 and 1000° C over that for standard SiGe. Thisdemonstrates that improved samples can be pressed directly and that aGa/P ratio less than one is necessary. The other two samples (Ga/P=0.33and 0.50) and Z's equal to or less than that of standard SiGebut had a lower hot-pressing temperature than the improved sample