Methods are described for modeling and measuring HV (high voltage)discharge current flow in ion implanters. It is pointed out that energysorted in HV structures of an ion implanter can become a powerful sourceof electromagnetic interference (EMI), if it is abruptly discharged intothe vacuum chamber through which the ion beam is transported. Analogcircuit simulation models and a simple experimental technique were usedto study the discharge characteristics of Eaton's implanters. As aresult of these studies design practices have been changed to reducesorted energy and radiating loop areas in the affected regions. Faultcurrent paths are now designed and consistent. Related measures haveimproved the integrity of the source electronics enclosure as a Faradaycage for the control electronics within it
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