High field semiconductor-dielectric systems: a special case of theclassical two-insulator systems

摘要

Some essential properties of the prebreakdown and breakdownphenomena in high-field semiconductor-dielectric systems (HFSDS) arepresented and discussed in terms of a two-channel model and a systemflashover sensitivity concept. The phenomena are considered forhigh-field Si-vacuum and -gas (SF₆, air, N₂, SF₆ mixture) systems. Two possible types of breakdown phenomenain HFSDS, totally different from each other, are proposed: (1) surfaceflashover as a discharge at the semiconductor-dielectric interface, and(2) bulk breakdown, where all the processes take place in thesemiconductor without any role on the part of the ambient. It isconcluded that HFSDS is a special case of the classical high-voltagesolid-insulator-vacuum or -gas dielectric systems