New infrared and other a

摘要

Abstract: The use of multilayer heterostructures based on the narrow-gap semiconductor materials InSb/InAlSb and HgCdTe is leading to a range of IR and other devices which can operate without cooling. Work in DERA will be reviewed which has demonstrated uncooled detectors out to 12 micrometer; uncooled infrared LEDs for the 3 - 12 micrometer region, employing either positive or negative luminescence; diode injection lasers with output between 3.9 micrometer and 5.1 micrometer (operating up to 150 k); and uncooled very high speed, very low voltage transistors. !25