Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics

摘要

Abstract: Long wavelength infrared (LWIR) photoconductive (PC)detectors of single element Hg$-0.79$/Cd$-0.21$/Te(MCT) on sapphire substrate were fabricated, usingthree kinds of MCT etching processes, such as wet only,wet & dry mixed, and dry only process. The ohmiccontact metals, which were used to the first contactlayer in the IR detector fabrication, were Au, Ni, andTi. The performance test of the fabricated IR detectorsshowed the good results in the wet etched MCT IRdetectors with the detectivities (D*) of (1-3) $MUL10$+10$/ cmHz$+$HLF$/W$+$MIN@1$/ and the responsivitiesof (2-3) $MUL 10$+4$/ VW$+$MIN@1$/ at field of view(FOV) of 180 degrees. !9