首页> 外文会议>Intl Conf on Thin Film Physics and Applications >Study of p-ZnTe-CdTe thin film heterojunction
【24h】

Study of p-ZnTe-CdTe thin film heterojunction

机译:p-ZnTe / n-CdTe薄膜异质结的研究

获取原文

摘要

Abstract: From band theory, this paper analyzes the junction region structure of p- ZnTe-CdTe heterojunction and offers the energy band figure. In the junction region, the bottom of the conduction band is noncontinuous and the top of the vanlence band has a convex peak in p-region and a concave peak in n-region. This thesis also analyzes the conduction of the heterojunction by the diffusion model. With thermal balance, the barrier for the p$YLD@n holes in the vanlence band is lower than that for the n$YLD@p electrons in the conduction band. So, the holes conduction is main and the electronic conduction can be negligible. The experimental method and the technological process of the heterojunction are described. And the results are given.!3
机译:摘要:从能带理论出发,分析了p-ZnTe / n-CdTe异质结的结区结构,并给出了能带图。在结区域中,导带的底部是不连续的,而导电带的顶部在p区域具有凸峰,在n区域具有凹峰。本文还通过扩散模型分析了异质结的传导。在热平衡的情况下,在空穴带中p $ YLD @ n空穴的势垒低于在导带中n $ YLD @ p电子的势垒。因此,空穴传导是主要的,而电子传导可以忽略不计。描述了异质结的实验方法和工艺过程。并给出结果!! 3

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号