In order to better understand the operation of magnetically insulated diodes, we have performed and are performing detailed studies of conditions within these diodes. Electron and ion flow and their correlation have been studied locally in the LONGSHOT diode (≲100 kV, 700 ns). The observed correlations made it possible to differentiate among three classes of ion deflections. Results imply the presence of transverse electric fields in the diode caused by changes in the shape of the anode plasma surface (two classes) or by cathode plasma processes (the third class). In experiments on a 50 ns, 400 kV diode generating ∼125 A/cm2 ion current density from a surface flashover anode, an average electron density of ∼1015/cm3 in the anode plasma was inferred from Stark (density) broadening of the hydrogen Hβ line. Preliminary measurements of ion transverse velocities obtained from the Doppler Broadening of optical emission from ions in the gap of a 400 kV, 300 ns ion diode have indicated a mean transverse energy of ∼100 eV, increasing with the distance from the anode.
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机译：为了更好地了解磁绝缘二极管的操作，我们已经并且正在对这些二极管中的条件进行详细研究。电子和离子流及其相关性已在LONGSHOT二极管（）100 kV，700 ns）中进行了局部研究。观察到的相关性使得可以区分三类离子偏转。结果表明，由于阳极等离子体表面形状的变化（两类）或阴极等离子体过程（第三类）而导致二极管中存在横向电场。在一个50 ns，400 kV二极管的实验中，该二极管从表面闪络阳极产生约125 A / cm 2 离子电流密度，平均电子密度为约10 15 / cm从氢H β线的Stark（密度）展宽推断出阳极等离子体中的 3 。初步测量了从400 kV，300 ns离子二极管的间隙中的离子发出的光发射的多普勒展宽所获得的离子横向速度，结果表明平均横向能量约为100 eV，随离阳极的距离而增加。
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