Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis

摘要

Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.