Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells

摘要

Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.