A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42 Efficiency 32dB Gain with DPD for W-CDMA Base station

摘要

A 2-stage 80W amplifier, which consists of a 450W saturated power GaN HEMT Doherty amplifier and a 30W driver, was developed. At first we developed the 450W GaN HEMT Doherty amplifier and obtained saturation power of 56.5dBm(450W) and drain efficiency of 55% at 6dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-stage amplifier up with the 30W driver stage amplifier. With this amplifier we obtained 42% efficiency (including 30W driver amplifier) and -50dBc ACLR at the average power of 49dBm(80W) with saturation power of 56.5dBm and Gain of 32dB.