A 160-183 GHz 0.24-W (7.5 PAE) PA and 0.14-W (9.5 PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT

摘要

Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining. S21 mid-band gain is 21.0 dB and DC power dissipation (PDC) is 3.05-W. The 3-dB S21 bandwidth (BW) is between 158.5-182.8 GHz. At 170-GHz, peak Pout is 244-mW (7.5% PAE). Pout is no less than 0.20-W between 160–180 GHz and is 177-mW at 183-GHz. The 170-GHz OP1dB 1-dB gain compression is 120-mW (3.8% PAE). This PA result improves upon the prior state-of-the-art by 2.2-2.8× for peak SSPA power. The second result is a 0.14-W PA using 2-way combining. S21 mid-band gain is 23.6 dB and PDC is 1.35-W. The 3-dB S21 BW is between 161.0-184.8 GHz. At 170-GHz, peak Pout is 140-mW (9.50% PAE), and Pout is 116–140 mW (8.0-9.5% PAE) between 160–183 GHz. The 170-GHz OP1dB is 70-mW (5.1% PAE). This PA result improves upon the prior state-of-the-art by 1.4-1.6× for peak SSPA power. This work establishes new SSPA RF power, gain, and PAE performance benchmarks at 160–183 GHz operation using a 250-nm InP HBT technology.