Tunable Frequency Selection Surface Based on 2.5-D Structure

摘要

This paper presents a tunable frequency selective surface based on a 2.5-D structure. The structure is connected by a 2.5-D structure on the basis of the gradual bending line, which further extends the length of the resonant patch. In addition, active devices are also introduced into the structure. PIN diode, variable-capacitance diode and inductor are simulated and observed respectively. While ensuring miniaturization, the resonant frequency can be tuned or switched. The simulation results show that, when different active devices are loaded, bandstop characteristics of different frequency bands can be realized: (1) Loading PIN diode, the resonant frequency can be switched between 1.992GH and 3.696GHz; (2) Load the varactor diode, the tunable frequency range is 2.01GHz-2.67GHz; (3) Load variable inductance, the tunable frequency range is 0.576GHz-1. 836GHz. At the same time, the structure also shows good stability for different incident angles of electromagnetic waves.