Characteristic Analysis of Silicon Nanowire Tunnel Field Effect Transistor (NW-TFET)

摘要

This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done for various dielectric values and observed that dielectric values are not having impact with NW-TFET