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A High Power Density Inverter Utilizing SiC-MOSFET and Fair Comparison Method of the Same Kind of Power Converters.

机译:利用SiC-MOSFET的高功率密度逆变器和同类功率转换器的合理比较方法。

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A high power density three-phase full-bridge inverter with forced air cooling for motor drive is presented. The inverter utilizes newly developed SiC-MOSFET chips having trench-gate structure, which contributes its high power density and high efficiency. The paper describes the concept and the design of the inverter followed by experimental results of its prototype, which prove the achievement of the targeted power density of 110kVA/L. The other important part of the paper is a proposal of a description manner for fair comparison of this kind of high power density inverters, which is motivated by the current unordered situation.
机译:提出了一种具有强制风冷的高功率密度三相全桥逆变器,用于电机驱动。该逆变器采用了新开发的具有沟槽栅结构的SiC-MOSFET芯片,有助于其高功率密度和高效率。本文介绍了逆变器的概念和设计,然后给出了其原型的实验结果,证明了达到110kVA / L的目标功率密度的目标。本文的另一个重要部分是提出一种描述方式的建议,以公平地比较这种高功率密度逆变器,这是受当前无序情况的推动。

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