Application of SiC MOSFETs in 6.6kW High-Frequency High-Power-Density Power Converter

摘要

This paper presents the application of Silicon Carbide (SiC) devices in a high-frequency LLC resonant DC/DC converter which can be used in bus converters, EV chargers, server powers, and energy storage. With high switching frequencies, the leakage inductance of the LLC transformer can be used as the resonant inductor, resulting in 50% reduction in volume and weight, and 30% decrease in power loss of the magnetic components at 500 kHz and 6.6 kW/400 V output. Experimental results have demonstrated the superb performance of SiC power devices over Si-based counterparts with a near 98.5% peak converter efficiency at 500 kHz in a converter with 400 V/16 A output.