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High-Definition Transcranial Direct Current Stimulation Device for Targeting Cerebral Cortex

机译:靶向脑皮质的高清经颅直流电刺激装置

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Non-invasive brain stimulation (NIBS) devices are progressively used as neuromodulator and are showing optimistic potential in the field of point care medical technology. The main aim of this study is to develop a prototype device, which helps in improving various neurological disorders, by increasing or decreasing neuronal excitability, depending upon the selection of a weak intensity of direct current. Conventionally, high definition transcranial direct current stimulation (HD-tDCS) device mainly depends upon three factors, viz, small size of high definition electrodes, multi-electrode configurations and optimized distribution of weak direct currents to the active and return electrodes. The proposed prototype HD-tDCS device is mainly focused on the internal circuit of the device, which provides precise distribution of direct current to both active and return electrodes, considering selected configurations. In this paper, HD-tDCS device has been designed which provides a weak direct current in the range of 1.00mA to 4.00mA with a measured error of +0.06mA to 0.06mA in the output direct currents. The % error between the theoretical and the measured values is less than 2%.
机译:非侵入性脑刺激(NIBS)设备逐渐被用作神经调节剂,并在点护理医学技术领域显示出乐观的潜力。这项研究的主要目的是开发一种原型设备,该设备可通过增加或降低神经元兴奋性来改善各种神经系统疾病,具体取决于对弱电流强度的选择。传统上,高清晰度经颅直流电刺激(HD-tDCS)设备主要取决于三个因素,即高清晰度电极的尺寸小,多电极配置以及对活动电极和返回电极的弱直流电流的优化分配。拟议的HD-tDCS原型设备主要集中在该设备的内部电路上,考虑到选定的配置,该电路可将直流电流精确分配到有源电极和返回电极。本文设计了HD-tDCS器件,该器件可提供1.00mA至4.00mA范围内的微弱直流电,而输出直流电中的测量误差为+ 0.06mA至0.06mA。理论值和测量值之间的百分比误差小于2%。

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