Raman Scattering and Photoluminescence of Porous GaAs

摘要

Raman scattering have been measured to study optical and structural properties of porous GaAs layers obtained by anodic etching. The Raman spectra are described and compared with the Raman spectra of single-crystal GaAs. The photoluminescence (PL) spectra were calculated using the Raman spectral regions with the presence of photoluminescence. The obtained PL spectra were used to quantitatively estimate the size of nanocrystallites in the porous layer. Analysis of the data allowed us to conclude that the quantum size effect is present in porous GaAs nanocrystallites.