首页> 外文会议>International Conference on Actual Problems of Electron Devices Engineering >Installation for Measuring of the Slope of the P-I Characteristic of the LED in the Range of the Electroluminescence Start Currents
【24h】

Installation for Measuring of the Slope of the P-I Characteristic of the LED in the Range of the Electroluminescence Start Currents

机译:用于测量电致发光起始电流范围内LED的P-I特性斜率的设备

获取原文
获取外文期刊封面目录资料

摘要

It is known that defects of InGaN/GaN LED heterostructure lead to a decrease of the slope of the light output power-current (P-I) characteristic of the LED. This is especially pronounced in microcurrent mode. An automated installation has been developed for measuring of the slope of the P-I characteristic of the LED in the current range of 5 µA … 3 mA. An example of a sample of green commercial LEDs shows the presence of a high correlation between the slope of the P-I characteristic and the defects density in the heterostructure of the LED. The measuring installation can be used in the system of quality control of LEDs.
机译:众所周知,IngaN / GaN LED异质结构的缺陷导致LED的光输出功率电流(P-I)特性的斜率降低。这在微电流模式中特别明显。已经开发了一种自动化安装,用于测量LED的P-I特性的斜率在5μA... 3 mA的电流范围内。绿色商业LED样本的示例显示了P-I特性的斜率与LED异质结构中的缺陷密度之间的高相关的存在。测量装置可用于LED的质量控制系统。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号