首页> 外文会议>International Conference on Actual Problems of Electron Devices Engineering >The Influence of Jumper Height of the Shadow Grid on the Efective Emission Area of the Dispenser Cathode in Cathode-Grid Assembly of High-Power Pulsed TWT
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The Influence of Jumper Height of the Shadow Grid on the Efective Emission Area of the Dispenser Cathode in Cathode-Grid Assembly of High-Power Pulsed TWT

机译:大功率脉冲TWT阴极-格栅组件中阴影栅网跳线高度对加油机阴极有效发射区的影响

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The results of experimental studies of the influence of the jumper height of the shadow grid structure on the effective emission area of the impregnated cathode in cathode-grid assembly in the C-band pulsed TWT are presented. It is shown that the field screening of the impregnated cathode surface along the jumpers of the shadow grid increases significantly with the elevation of the grid structure above the cathode surface. In order to maintain the working value of the cathode it is necessary to increase its temperature, which significantly reduces the lifetime of the cathode and decreases its reliability and durability.
机译:提出了在C波段脉冲TWT中,阴极格栅结构的跳线高度对阴极格栅组件中浸渍阴极有效发射面积影响的实验研究结果。结果表明,随着栅网结构在阴极表面上方的升高,沿阴影栅网跳线的浸渍阴极表面的场屏蔽显着增加。为了保持阴极的工作值,必须提高其温度,这显着降低了阴极的寿命并降低了其可靠性和耐久性。

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