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Low Leakage Current Mesa-type Avalanche Photodiodes with Zn-diffused Sidewall

机译：具有锌扩散侧壁的低泄漏电流台面型雪崩光电二极管

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摘要

We report suppression of sidewall leakage current by up to two orders of magnitude in InGaAs / InP mesa-type avalanche photodiodes with a p-type sidewall formed by Zn diffusion, compared to reference devices without a p-type sidewall on the same wafer.

机译：与在同一晶圆上没有p型侧壁的参考器件相比，我们报告了在具有由Zn扩散形成的p型侧壁的InGaAs / InP台面型雪崩光电二极管中，侧壁泄漏电流的抑制高达两个数量级。

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《IEEE Photonics Conference》|2020年|1-2|共2页
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作者
Oliver J. Pitts; Alexandre W. Walker; Costel Flueraru; Craig Storey; Anthony J. SpringThorpe;
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关键词
Zinc; Dark current; Avalanche photodiodes; Electric fields; Doping; Leakage currents; Performance evaluation;

机译：锌;暗电流;雪崩光电二极管;电场;掺杂;漏电流;性能评估;

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1. Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode [J] . Junqin Zhang, Hongmei Lin, Meng Liu, AIP Advances . 2021,第7期

机译：Mesa Ge / Si Avalanche Photodiode侧壁漏电流研究
2. A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode [J] . Li B., Lv Q., Cui R., Photonics Technology Letters, IEEE . 2015,第1期

机译：低暗电流台面型InGaAs / InAlAs雪崩光电二极管
3. Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current [J] . Jia Xingyu, Chen Sung-Wen Huang, Liu Yajin, IEEE Transactions on Electron Devices . 2020,第5期

机译：用于获得高击穿电压和低漏电流的MESA型GaN基肖特基屏障二极管的设计策略
4. Characterization of silicon avalanche photodiode in term of breakdown voltage and leakage current [C] . Taib S.N., Othman M.A., Husein M.N., International Symposium on Technology Management and Emerging Technologies . 2014

机译：根据击穿电压和漏电流表征硅雪崩光电二极管
5. Molecular-beam epitaxial growth of low-dark-current avalanche photodiodes [D] . Hurst, Jeffrey Byron 2007

机译：低暗电流雪崩光电二极管的分子束外延生长
6. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging [O] . Tomislav Resetar, Koen De Munck, Luc Haspeslagh, 2016

机译：用于高速微光成像的门控固定雪崩光电二极管像素的开发
7. Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes [O] . Jackson Jennifer C., Hurley Paul K., Lane Bill, 2002

机译：比较盖革模式雪崩光电二极管中的泄漏电流和暗计数率
8. Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes; Final rept [R] . Folkes, P. A., Little, J., Svensson, S., 2008

机译：Inas-Gasb超晶格光电二极管的低温光致发光和漏电流特性;最终的评论

Low Leakage Current Mesa-type Avalanche Photodiodes with Zn-diffused Sidewall

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