Motheye Structures Antireflective Coatings for Enhancing GaAs Transmission Performance at Mid-Infrared Wavelengths

摘要

We have fabricated GaAs motheye structures using contact photolithography printing. We have achieved an average transmission improvement of 123% from 2000 cm ⁻¹ to 700 cm⁻¹ (5 μm-14 μm) relative to an uncoated wafer.