Four Wave Mixing in Tellurium-Oxide-Coated Silicon Nitride Ring Resonator

摘要

In this work, we present on the observation of four-wave mixing (FWM) in the tellurium oxide coated silicon nitride ring resonator with internal Q factor of 6 × 10⁵ with oscillation at wavelengths ranging from 1020 nm to 2530 nm under 1590 nm pumping for threshold launched pump power of 33 mW. This result is promising for higher performance and lower threshold power nonlinear devices using CMOS-compatible and wafer-scale processing steps, enabling compatibility with existing photonic integrated circuit (PIC) technology.