Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

摘要

We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.