Device performance of silicene nanoribbon field-effect transistor under ballistic transport

摘要

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 10⁵, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications.