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Non-Volatile Coarse Grained Reconfigurable Array Enabling Two-step Store Control for Energy Minimization

机译:非易失性粗粒度可重构阵列,可实现两步存储控制,以实现能源最小化

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Non-volatile power gating introducing MTJ into a flip-flop is an attractive technique for IoT devices. However, the time required for a successful store operation to MTJs varies at non-volatile flip-flops (NVFFs) due to process and voltage variation. This paper describes implementation and real-chip evaluation of a non-volatile Coarse Grained Reconfigurable Array employing verify-and-retryable NVFF (VR-NVFF) circuits and two-step store (TSS) control by instructions of a microcontroller. Test chips fabricated in a 40nm CMOS/MTJ hybrid technology have demonstrated that the TSS approach using both 30ns/100ns store operations reduces power by 37-42% when running an image processing program at 100MHz.
机译:将MTJ引入触发器的非易失性电源门控是IoT设备的一项有吸引力的技术。但是,由于过程和电压的变化,在MTJ上成功存储操作所需的时间在非易失性触发器(NVFF)上会有所不同。本文介绍了采用可验证和可重试的NVFF(VR-NVFF)电路以及两步存储(TSS)控制(通过微控制器的指令)对非易失性粗粒度可重构阵列的实现和实际芯片评估。用40nm CMOS / MTJ混合技术制造的测试芯片已证明,在100MHz下运行图像处理程序时,同时使用30ns / 100ns存储操作的TSS方法可将功耗降低37-42%。

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