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Local Anodic Oxidation Proceses Influence and Temterature Stability on the Memristive Propherties of Titanium Oxide Nanostructures for ReRAM Development

机译:局部阳极氧化过程对TiRAM纳米结构用于ReRAM开发的忆阻层的影响和温度稳定性

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The paper presents the researching results of the memristor effect on titanium oxide nanostructures obtained by local anodic oxidation. Studies have been carried out on the effect of air humidity in the process chamber during local anodic oxidation on the memristor structures main parameters. Based on oxygen vacancies distribution numerical simulation in the oxide volume formed by this method, the obtained dependences were explained. A ReRAM layout consisting of 10 memristors was developed and manufactured, and the temperature influence on its characteristics was investigated. The results can be used in the technological processes development for the formation of memristor structures based on titanium oxide nanostructures.
机译:本文介绍了忆阻器对通过局部阳极氧化获得的氧化钛纳米结构的研究结果。已经研究了在局部阳极氧化过程中,处理室中空气湿度对忆阻器结构主要参数的影响。基于该方法形成的氧化物体积中氧空位分布的数值模拟,解释了所获得的依赖性。开发并制造了由10个忆阻器组成的ReRAM布局,并研究了温度对其特性的影响。该结果可用于基于氧化钛纳米结构形成忆阻器结构的技术过程开发中。

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