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A 4MS/s 10b SAR ADC with integrated Class-A buffers in 65nm CMOS with near rail-to-rail input using a single 1.2V supply

机译:一个具有65nm CMOS集成A类缓冲器的4MS / s 10b SAR ADC,使用1.2V单电源即可实现接近轨到轨的输入

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We present a 10b differential SAR ADC integrated with unity gain (Class-A) voltage buffers, operating from a single supply voltage 1.2V and handling near rail-to-rail inputs. The two differential inputs are first compared and depending on the comparison result, the inputs are either swapped or not, after which these signals are buffered, sampled and converted. This way each of the two buffers needs to handle only half of the full-scale range which enables operation of the Class-A buffers at the ADC supply voltage while providing an overall near rail-to-rail (full-scale) input range for conversion. The buffered ADC can handle 2VP-P differential input and consumes 149μW at 4MS/s to achieve a state-of-the-art Walden FoM of 87fJ/conversion-step including buffers. The buffered ADC was designed in a 65nm CMOS process and occupies an active area of 0.04mm2.
机译:我们提供了一个集成了单位增益(A类)电压缓冲器的10b差分SAR ADC,该器件使用1.2V单电源电压供电,并在轨至轨输入附近进行处理。首先比较两个差分输入,然后根据比较结果交换或不交换输入,然后对这些信号进行缓冲,采样和转换。这样,两个缓冲器中的每个缓冲器仅需要处理满量程范围的一半,这使得A类缓冲器能够在ADC电源电压下工作,同时为A类缓冲器提供了一个总体上接近轨到轨(满量程)的输入范围。转换。缓冲ADC可以处理2V P-P 差分输入并以4MS / s的速度消耗149μW,以达到87fJ /转换步骤(包括缓冲器)的最新Walden FoM。缓冲ADC是采用65nm CMOS工艺设计的,其有效面积为0.04mm 2

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