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Design of a Low Power and Low Phase Noise VCO Using Active Resistor and DTMOS

机译:利用有源电阻和DTMOS的低功耗,低相位噪声VCO设计

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This brief represents a low power and low phase noise voltage controlled oscillator (VCO) using dynamic threshold MOSFETs (DTMOS) and active resistors. One pair of nMOS and one pair of pMOS transistors are associated in between CMOS cross-coupled pair, which serves as active resistors in series with the cross-coupled pair. DTMOSs are used instead of normal MOSFETS, in which the body is dynamically connected to the gate so that the body to source voltage will be adjusted with the change in gate voltage. This is responsible for threshold voltage reduction. With a decrease in the threshold voltage, the output voltage swing of VCO increases and the phase noise decreases accordingly. In this work in addition to conventional DTMOS, a capacitive divider circuit is used, which solves the issue of forward biasing of pn-junction at body to source of MOSFETs. The proposed VCO architecture is implemented in 180 nm CMOS technology and simulated in cadence tool. It demonstrates a tuning range of 1.78 GHz to 1.81 GHz and lower phase noise of -118 dBc/Hz at carrier offset of 1 MHz and -48 dBc/Hz at carrier offset of 1 kHz with a power consumption of 0.15 mW. So, this work will be a proper building block for the design of a customized receiver.
机译:本简介代表使用动态阈值MOSFET(DTMOS)和有源电阻的低功耗和低相位噪声压控振荡器(VCO)。一对nMOS和一对pMOS晶体管在CMOS交叉耦合对之间关联,该交叉耦合对用作与交叉耦合对串联的有源电阻器。使用DTMOS代替普通的MOSFET,在MOSFET中,主体动态连接至栅极,因此可以通过栅极电压的变化来调整主体至源极的电压。这负责降低阈值电压。随着阈值电压的减小,VCO的输出电压摆幅增大,并且相位噪声相应地减小。在这项工作中,除了传统的DTMOS之外,还使用了一个电容分压器电路,该电路解决了本体上pn结对MOSFET源极的正向偏置问题。提出的VCO架构在180 nm CMOS技术中实现,并在脚踏圈速工具中进行了仿真。它展示了1.78 GHz至1.81 GHz的调谐范围,载波偏移为1 MHz时的较低相位噪声为-118 dBc / Hz,载波偏移为1 kHz时的较低相位噪声为-48 dBc / Hz,功耗为0.15 mW。因此,这项工作将成为定制接收器设计的适当基础。

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