2.45 GHz Energy Harvesting On-chip Rectenna in $0.18 mu mathrm{m}$ RF CMOS Process

摘要

A fully integrated on-chip rectenna operating at 2.45 GHz is designed in standard 0.18 μm technology RF CMOS process. The rectenna circuit is based on complex conjugate impedance matching technique of antenna with rectifier. A miniaturized planar antenna is inductively coupled to a self-threshold voltage (V_th) reduction type rectifier. At a distance of 10 cm from any RF source with an effective isotropic radiated power (EIRP) of 36 dBm, the rectenna provides a rectified DC voltage of 1 V with a power conversion efficiency (PCE) of 50% for -14 dBm input power. Given the ample generated DC power and GHz frequency range of operation, this on chip rectenna is suitable for miniaturized, low cost, and battery-less implantable electronics and RFID tags.