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Parasitically Coupled Three Element DRA Array with Reduced Side Lobe Lavel

机译:通过减少侧瓣级寄存耦合三个元素DRA阵列

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A three element E-plane parasitic DRA array partially inserted within a secondary substrate has been realized in this paper for broadside radiation. The proposed DRA array operates from 7.02 GHz to 7.26 GHz and gives broadside radiation pattern with a peak gain of 7.22 dBi. Four metal strips are placed in very close proximity to the DRAs which help to improve the matching as well as decrease the side lobe lavel. Three different arrangement of the array is studied here and from simulations results of S11 and radiation characteristics it is evident that embedded array with metal strips is improved the side lobe lavel almost 3.2 dB in E-plane compared to the isolated array.
机译:本文已经实现了部分插入二次基板内的三个元件E面寄生DRA阵列,用于广泛辐射。所提出的DRA阵列从7.02GHz到7.26 GHz运行,并为广播辐射模式提供7.22 dBi的峰值增益。将四个金属条放置在非常靠近的DRAs上,这有助于改善匹配以及减小侧瓣阀。这里研究了三种不同的阵列布置,以及S的模拟结果 11 和辐射特性明显,与隔离阵列相比,具有金属条的嵌入阵列几乎是3.2dB的侧瓣阀门。

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