Transfer Characteristic of AlGaN/GaN Ridge HEMTs Used for Power Supply Circuits of Flexible Devices

摘要

The drain current model of AlGaN/GaN Ridge HEMTs has been studied for switching power supply circuits of flexible devices. The physically derived model is developed, and then implemented in a circuit simulator with Verilog-A source codes. To apply the models to simulate power supply circuits for flexible devices, the weak inversion to linear characteristics and the maximum drain current are important. The model is verified with measured data of transistor TEGs that we fabricated with a source field plate technology. The results show reasonable agreements between measurements and simulations.